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| RDN100N20 Transistors Switching (200V, 10A) RDN100N20 !Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. !External dimensions (Unit : mm) TO-220FN 10.0 +0.3 -0.1 3.20.2 4.5 +0.3 -0.1 2.8 -0.1 +0.2 15.0 +0.4 -0.2 12.00.2 !Application Switching 5.00.2 8.00.2 1.2 1.3 14.00.5 0.8 !Structure Silicon N-channel MOS FET (1) Gate (2) Drain (3) Source 2.540.5 2.540.5 0.75 -0.05 +0.1 2.60.5 (1) (2) (3) !Absolute maximum ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Current Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IDR IDRP 1 IAS 2 EAS 2 PD Tch Tstg Limits 200 30 10 40 10 40 10 120 35 150 -55 to +150 Unit V V A A A A A mJ W C C !Equivalent circuit Drain Gate Avalanche Current Avalanche Energy Total Power Dissipation (TC=25C) Channel Temperature Storage Temperature Gate Protection Diode Source 1 Pw 10s, Duty cycle 1% 2 L 4.5mH, VDD=50V, RG=25, 1Pulse, Tch=25C A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. 1/3 RDN100N20 Transistors !Electrical characteristics (Ta=25C) Parameter Gate-Source Leakage Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Reverse Recovery Time Reverse Recovery Charge Total Gate Charge Symbol IGSS V(BR) DSS IDSS VGS (th) RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf trr Qrr Qg Min. 200 2.0 2.3 Typ. 0.27 3.8 543 193 64 13 29 38 26 133 0.54 15 Max. 10 25 4.0 0.36 Unit A V A V S pF pF pF ns ns ns ns ns C nC Conditions VGS=30V, VGS=0V ID=250A, VGS=0V VDS=200V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V VDS=10V, ID=5A VDS=10V VGS=0V f=1MHz ID=5A, VDD 100V VGS=10V RL=20 RGS=10 IDR=10A, VGS=0V di / dt=100A / s VDD=100V,VGS=10V,ID=10A !Electrical characteristic curves 100 TC=25C Single Pulse 20 Ta=25C 18 Pulsed 8V 100 VDS=10V Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 10 Operation in this area is limited by Ros(on) 1m S Pw =1 0m S pe DC O 16 14 12 10 8 6 4 2 10V 9V 7V 10 Ta=125C Ta=75C Ta=25C Ta= -25C 10 0 s 1 1 6V ra tio n 0.1 5V VGS=4V 0.1 1 10 100 1000 0 0.01 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Maximun Safe Operating Area Fig.2 Typical Output Characteristics Fig.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : VGS (th) (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 6.4 5.6 4.8 4 3.2 2.4 1.6 0.8 0 -50 -25 0 25 50 75 100 125 150 VDS=10V ID=1mA 1 Ta= -25C Ta=25C Ta=75C Ta=125C 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=10V Pulsed Ta=25C Pulsed 0.75 0.5 ID=10A 0.25 5A 0.1 0.01 0.1 1 10 100 0 0 5 10 15 20 25 30 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2/3 RDN100N20 Transistors 0.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 ID=10A 4A 10 5 Ta= -25C Ta=25C Ta=75C Ta=125C REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed 20 VDS=10V Pulsed 100 VGS=0V Pulsed 10 FORWARD TRANSFER ADMITTANCE :Yfs(S) 2 1 0.5 1 Ta= -25C Ta=25C Ta=75C Ta=125C 0.1 100 125 150 0.2 0.05 0.1 0.2 0.5 1 2 5 10 20 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 CHANNEL TEMPERATURE : Tch (C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.8 Forward Transfer Admittance vs. Drain Current Fig.9 Reverse Drain Current vs. Source-Drain Voltage 10000 180 160 140 120 100 80 60 40 20 0 0 5 VDD=40V VDD=100V VDD=160V VDD=40V VDD=100V VDD=160V VDS 1000 Ciss(pF) VGS REVERSE RECOVERY TIME : trr (ns) DRAIN-SOURCE VOLTAGE : IDS (V) GATE-SOURCE VOLTAGE : VGS (V) CAPACITANCE : C (pF) f=1MHz VGS=0V Ta=25C Pulsed 200 Ta=25C ID=8.0A Pulsed 20 1000 Ta=25C di / dt=100A / s VGS=0V Pulsed 100 Coss(pF) 10 100 Ciss(pF) 10 1 0.1 1 10 100 1000 10 15 0 20 10 0.1 1 10 100 DRAIN SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) REVERSE DRAIN CURRENT : IDR (A) Fig.10 Typical Capacitance vs. Drain-Source Voltage Fig.11 Dynamic Input Characteristics Fig.12 Reverse Recovery Time vs. Reverse Drain Current 1000 SWITCHING TIME : t (ns) tr NORMALIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta=25C VDD=100V VGS=10V RQ=10 Pulsed 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 100 td (off) 0.01 0.01 Single pulse Tc=25C th(ch-c)(t)=r(t) * =th(ch-c) th(ch-c)=3.57C / W D= PW T tr td (on) PW T 10 0.1 1 10 100 0.001 10 100 1m 10m 100m 1 10 DRAIN CURRENT : ID (A) PULSE WIDTH : PW (S) Fig.13 Switching Characteristcs Fig.14 Normalized Transient Thermal Resistance vs. Pulse Width 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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